Display device, backlight module and electronic device

ABSTRACT

A display device includes a substrate, a driving circuit structure and a light emitting device. The light emitting device is disposed on the driving circuit structure and electrically connected to a driving thin film transistor in the driving circuit structure, wherein a device conductive layer includes a first section electrically connected to a first carrier transmitting layer through a first conductive connecting structure and a second section electrically connected to a second carrier transmitting layer through a second conductive connecting structure. A minimum distance between a topmost surface of the first section and the substrate is greater than a minimum distance between a topmost surface of the second conductive connecting structure and the substrate, and a minimum distance between a topmost surface of the second section and the substrate is greater than a minimum distance between a topmost surface of the first conductive connecting structure and the substrate.

CROSS REFERENCE TO RELATED APPLICATIONS

This patent application is a continuation application and claimspriority of U.S. patent application Ser. No. 16/051,396, filed on Jul.31, 2018, which is incorporated by reference in their entirety.

BACKGROUND OF THE DISCLOSURE 1. Field of the Disclosure

The present disclosure relates to an electronic device, and moreparticularly to an electronic device having a driving thin filmtransistor to drive a light emitting device.

2. Description of the Prior Art

As the evolution and development of electronic devices, the electronicdevices are widely used and have become an indispensable item in thesedays. For example, a display device, which is a kind of the electronicdevices, has the characteristics of thin appearance, light weight, lowpower consumption and low radiation pollution, and it has been used insuch as televisions, monitor, notebooks, smart phones, watches, anddisplay devices in vehicles, so as to transmit and display informationmore conveniently. In general, the electronic device may have a lightemitting device, such as light-emitting diode (LED), to emit light.However, the driving performance of the light emitting device needs tobe improved in order to reduce the cost.

SUMMARY OF THE DISCLOSURE

According to an embodiment, the present disclosure provides a displaydevice including a substrate, a driving circuit structure and at leastone light emitting device. The driving circuit structure is disposed onthe substrate and has at least one driving thin film transistor. Thelight emitting device is disposed on the driving circuit structure, andhas a device conductive layer, a first conductive connecting structure,a second conductive connecting structure, a first carrier transmittinglayer and a second carrier transmitting layer, wherein the deviceconductive layer includes a first section and a second section, thefirst section is electrically connected to the first carriertransmitting layer through the first conductive connecting structure,and the second section is electrically connected to the second carriertransmitting layer through the second conductive connecting structure.The light emitting device is electrically connected to the driving thinfilm transistor. A minimum distance between at least a part of a topmostsurface of the first section and the substrate is greater than a minimumdistance between a topmost surface of the second conductive connectingstructure and the substrate, and a minimum distance between at least apart of a topmost surface of the second section and the substrate isgreater than a minimum distance between a topmost surface of the firstconductive connecting structure and the substrate.

These and other objectives of the present disclosure will no doubtbecome obvious to those of ordinary skill in the art after reading thefollowing detailed description of the embodiment that is illustrated inthe various figures and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram showing a cross-sectional view of asubstrate structure of an electronic device according to a firstembodiment of the present disclosure.

FIG. 2A and FIG. 2B are schematic diagrams showing a top-view of a lightemitting device and bonding pads of the substrate structure of theelectronic device according to the first embodiment of the presentdisclosure.

FIG. 3 is schematic diagram showing a top-view of a thin film transistorof the substrate structure of the electronic device according to thefirst embodiment of the present disclosure.

FIG. 4 is schematic diagram showing a cross-sectional view of thesubstrate structure and a backplane structure of the electronic devicebefore assembling according to an embodiment of the present disclosure.

FIG. 5 is schematic diagram showing a cross-sectional view of theelectronic device according to an embodiment of the present disclosure.

FIG. 6 is a schematic diagram showing a cross-sectional view of asubstrate structure of an electronic device according to a secondembodiment of the present disclosure.

FIG. 7 is a schematic diagram showing a cross-sectional view of asubstrate structure of an electronic device according to a thirdembodiment of the present disclosure.

FIG. 8 is a schematic diagram showing an equivalent circuit of thesubstrate structure of the electronic device according to the thirdembodiment of the present disclosure.

FIG. 9 is a schematic diagram showing a cross-sectional view of asubstrate structure of an electronic device according to a fourthembodiment of the present disclosure.

FIG. 10 is a schematic diagram showing an equivalent circuit of thesubstrate structure of the electronic device according to the fourthembodiment of the present disclosure.

FIG. 11 is a schematic diagram showing a cross-sectional view of asubstrate structure of an electronic device according to a variantembodiment of the fourth embodiment of the present disclosure.

FIG. 12 is a schematic diagram showing a top-view of a light emittingdevice and bonding pads of the substrate structure and an electrostaticdischarge protection device of the electronic device according to thevariant embodiment of the fourth embodiment of the present disclosure.

FIG. 13 is a schematic diagram showing a cross-sectional view of asubstrate structure of an electronic device according to a fifthembodiment of the present disclosure.

FIG. 14 is a schematic diagram showing a cross-sectional view of asubstrate structure of an electronic device according to a sixthembodiment of the present disclosure.

FIG. 15A and FIG. 15B are schematic diagrams showing a cross-sectionalview of a substrate structure of an electronic device according to aseventh embodiment of the present disclosure.

FIG. 16 is a schematic diagram showing a cross-sectional view of asubstrate structure of an electronic device according to an eighthembodiment of the present disclosure.

FIG. 17A and FIG. 17B are schematic diagrams showing a cross-sectionalview of the electronic device according to the eighth embodiment of thepresent disclosure.

FIG. 18 is a schematic diagram showing a cross-sectional view of anelectronic device according to a ninth embodiment of the presentdisclosure.

FIG. 19 is a schematic diagram showing a cross-sectional view of anelectronic device according to a tenth embodiment of the presentdisclosure.

FIG. 20 is a schematic diagram showing a cross-sectional view of anelectronic device according to an eleventh embodiment of the presentdisclosure.

DETAILED DESCRIPTION

The present disclosure may be understood by reference to the followingdetailed description, taken in conjunction with the drawings asdescribed below. It is noted that, for purposes of illustrative clarityand being easily understood by the readers, various drawings of thisdisclosure show a portion of an electronic device ED, and certainelements in various drawings may not be drawn to scale. In addition, thenumber and dimension of each device shown in drawings are onlyillustrative and are not intended to limit the scope of the presentdisclosure.

Certain terms are used throughout the description and following claimsto refer to particular components. As one skilled in the art willunderstand, electronic equipment manufacturers may refer to a componentby different names. This document does not intend to distinguish betweencomponents that differ in name but not function. In the followingdescription and in the claims, the terms “include”, “comprise” and“have” are used in an open-ended fashion, and thus should be interpretedto mean “include, but not limited to . . . ”. Thus, when the terms“include”, “comprise” and/or “have” are used in the description of thepresent disclosure, the corresponding features, areas, steps, operationsand/or components would be pointed to existence, but not limited to theexistence of one or a plurality of the corresponding features, areas,steps, operations and/or components.

When the corresponding component such as layer or area is referred to“on another component (or the variant thereof)” or “extend to anothercomponent”, it may be directly on another component or directly extendto another component, or other component may exist between them. On theother hand, when the component is referred to “directly on anothercomponent (or the variant thereof)” or “directly extend to anothercomponent”, any component does not exist between them.

It will be understood that when an element or layer is referred to asbeing “on” or “connected to” another element or layer, it can bedirectly on or directly connected to the other element or layer, orintervening elements or layers may be presented. In contrast, when anelement is referred to as being “directly on” or “directly connected to”another element or layer, there are no intervening elements or layerspresented. In addition, when the component is referred to “be coupledto/with another component (or the variant thereof)”, it may be directlyconnected to another component, or may be indirectly connected (such aselectrically connected) to another component through other component orcomponents.

It should be noted that the technical features in different embodimentsdescribed in the following can be replaced, recombined, or mixed withone another to constitute another embodiment without departing from thespirit of the present disclosure.

Referring to FIG. 1 to FIG. 3, FIG. 1 is a schematic diagram showing across-sectional view of a substrate structure of an electronic deviceaccording to a first embodiment of the present disclosure, FIG. 2A andFIG. 2B are schematic diagrams showing a top-view of a light emittingdevice and bonding pads of the substrate structure of the electronicdevice according to the first embodiment of the present disclosure, andFIG. 3 is a schematic diagram showing a top-view of a thin filmtransistor of the substrate structure of the electronic device accordingto the first embodiment of the present disclosure, wherein FIG. 2A andFIG. 2B only show a light emitting layer 174, connecting posts andbonding pads BP to make the figures clear. As shown in FIG. 1 to FIG. 3,a substrate structure 100 of an electronic device ED is shown, and thesubstrate structure 100 includes a substrate 110, a driving circuitstructure DCS and at least one light emitting device LD. The substrate110 may be a hard substrate such as a glass substrate, a plasticsubstrate, a quartz substrate or a sapphire substrate, or may be aflexible substrate including polyimide (PI) or polyethyleneterephthalate (PET), but not limited thereto.

The driving circuit structure DCS is disposed on the substrate 110. Inthis embodiment, the driving circuit structure DCS may include asemiconductor layer 120, a first insulating layer 130, a firstconductive layer 132, a second insulating layer 140 and a secondconductive layer 142. The semiconductor layer 120 is disposed on thesurface of the substrate 110, the first insulating layer 130 is disposedon the semiconductor layer 120, the first conductive layer 132 isdisposed on the first insulating layer 130, the second insulating layer140 is disposed on the first conductive layer 132, and the secondconductive layer 142 is disposed on the second insulating layer 140.Furthermore, the driving circuit structure DCS may have at least onedriving thin film transistor DT, formed by the conductive layers and theinsulating layers thereof. Specifically, in this embodiment, the drivingthin film transistor DT includes a channel layer CLd formed of thesemiconductor layer 120, a gate electrode Gd formed of the firstconductive layer 132, a gate insulator GId formed of the firstinsulating layer 130, and a source electrode Sd and a drain electrode Ddformed of the second conductive layer 142, such that the driving thinfilm transistor DT is formed as a top gate transistor, but not limitedthereto. In another embodiment, the driving thin film transistor DT maybe other type transistor, such as bottom gate transistor. Furthermore,the gate electrode Gd and the channel layer CLd of the driving thin filmtransistor DT may have any suitable shape in the top view, such asquadrangle and U-shape, but not limited thereto. In this embodiment, thegate electrode Gd and the channel layer CLd shown in FIG. 3 arerectangular, and an overlapping region OR formed by the gate electrodeGd and the channel layer CLd is rectangular, but not limited thereto.Apart from above, the driving circuit structure DCS of this embodimentmay further include other conductive layer and/or other insulatinglayer. For example, the driving circuit structure DCS of this embodimentfurther includes a third insulating layer 150 disposed on the secondconductive layer 142 and a third conductive layer 152 disposed on thethird insulating layer 150. In addition, the driving circuit structureDCS may further have other components, such as a plurality of bondingpads BP formed of a top conductive layer. In this embodiment, thebonding pads BP is formed of the third conductive layer 152, and atleast one of the bonding pads BP is electrically connected to the drainelectrode Dd or the source electrode Sd of the driving thin filmtransistor DT, but not limited thereto.

The light emitting device LD of this embodiment may be disposed on thedriving circuit structure DCS by such as a mass transferring process,and the light emitting device LD may be light-emitting diode (LED),micro light-emitting diode (micro LED), mini light-emitting diode (miniLED), organic light-emitting diode (OLED), quantum dots light-emittingdiode (QLED) or other suitable light emitting device, but not limitedthereto. In this embodiment, each light emitting device LD may be a kindof LED for instance and include a first carrier transmitting layer 172,a light emitting layer 174, a second carrier transmitting layer 176, adevice insulating layer 180, a device conductive layer 190 and apassivation layer PS. The light emitting layer 174 is disposed on thesecond carrier transmitting layer 176, the first carrier transmittinglayer 172 is disposed on the light emitting layer 174, the deviceinsulating layer 180 is disposed on the first carrier transmitting layer172, the device conductive layer 190 is disposed on the deviceinsulating layer 180, and the passivation layer PS is disposed on thedevice conductive layer 190. In this embodiment, the device conductivelayer 190 includes a first electrode EL1 and a second electrode EL2, thefirst electrode EL1 is electrically connected to the first carriertransmitting layer 172 through a conductive connecting structure CS, andthe second electrode EL2 is electrically connected to the second carriertransmitting layer 176 through another conductive connecting structureCS separated from the first carrier transmitting layer 172 by an innerinsulating structure IS, but the present disclosure is not limitedthereto. Moreover, the light emitting device LD has a first connectingpost CP1 and a second connecting post CP2 thereby being disposed on thedriving circuit structure DCS; that is, the first connecting post CP1and the second connecting post CP2 are respectively mounted on thebonding pads BP in the mass transferring process. In this embodiment,the first connecting post CP1 and the second connecting post CP2 arerespectively embedded to the corresponding bonding pads BP andrespectively electrically connected to the first electrode EL1 and thesecond electrode EL2. Thus, the light emitting device LD is electricallyconnected to the driving thin film transistor DT through the firstconnecting post CP1 and the bonding pad BP. A type of the light emittingdevice LD shown in FIG. 2A has one first connecting post CP1 and onesecond connecting post CP2, and another type of the light emittingdevice LD shown in FIG. 2B has a plurality of first connecting posts CP1and a plurality of second connecting posts CP2 to be mounted on thebonding pads BP stably, but the present disclosure is not limitedthereto. In addition, the first connecting post CP1 and the secondconnecting post CP2 of this embodiment may be formed of the deviceconductive layer 190, but not limited thereto. In other words, parts ofthe device conductive layer 190 protrudes from an extension surface of abottom surface of the second carrier transmitting layer 176 is the firstconnecting post CP1 and the second connecting post CP2, the other partsof the device conductive layer 190 is the first electrode EL1 and thesecond electrode EL2. In another embodiment, the first connecting postCP1 and the second connecting post CP2 may be formed of other conductivestructure. Furthermore, the light emitting device LD of this embodimentemits light downward (from up to down) in FIG. 1, but not limitedthereto. Apart from above, in this embodiment, an adhesive layer 160 maybe further disposed on the driving circuit structure DCS and in contactwith the light emitting device LD to enhance the connection between thelight emitting device LD and the driving circuit structure DCS, and theadhesive layer 160 of this embodiment is situated between the lightemitting device LD and the driving circuit structure DCS. Also, afterdisposing the light emitting device LD, an over coating layer OC may befurther formed to cover the light emitting device LD to protect thelight emitting device LD.

Note that, the driving thin film transistor DT is configured to drivethe light emitting device LD and control a driving current for emittinglight, and the driving thin film transistor DT may be electricallyconnected between the light emitting device LD and a voltage source andmay be electrically connected to a data input (i.e. providing a graylevel signal). For example, in this embodiment, one of the drainelectrode Dd and the source electrode Sd of the driving thin filmtransistor DT is electrically connected to a voltage source (i.e.providing higher voltage), the other one of the drain electrode Dd andthe source electrode Sd of the driving thin film transistor DT iselectrically connected to the light emitting device LD, the gateelectrode Gd of the driving thin film transistor DT is electricallyconnected to a gate input, and the second connecting post CP2 of thelight emitting device LD may be electrically connected to a commonelectrode or another voltage source providing a common voltage or othersuitable voltage (i.e. lower voltage), but not limited thereto. Anysuitable circuit may be used in the present disclosure, and the drivingthin film transistor DT may be further electrically connected to othercomponent or compensating circuit.

In order to enhance a light emitting area of the light emitting deviceLD (for example, an opening rate of a pixel of a display device), a sizeof the light emitting device LD may be increased. When the size of thelight emitting device LD is increased, a driving current configured todrive the light emitting device LD needs to be increased, and a distanceD between the first connecting post CP1 and the second connecting postCP2 is greater. A formula of the current passing through a transistor ina saturation mode is shown below:

I _(D)=[(μ_(n) ×C _(ox))/2]×[W/L]×(V _(GS) −V _(TH))²,

wherein I_(D) is a current flow, μ_(n) is a carrier mobility, C_(ox) isa gate oxide capacitance per unit area, W is a channel width, L is achannel length, V_(GS) is a voltage difference between gate and source,and V_(TH) is a threshold voltage. According to the current formula,when the channel length of the channel layer CLd of the driving thinfilm transistor DT is reduced, the driving current passing through thedriving thin film transistor DT is increased. In this embodiment, thedistance D between the first connecting post CP1 and the secondconnecting post CP2 of the light emitting device LD is greater than achannel length Ld of the channel layer CLd of the driving thin filmtransistor DT. In other words, the ratio (D/Ld) of the distance Dbetween the first connecting post CP1 and the second connecting post CP2to the length Ld is greater than 1. Note that, the channel length Ld ofthe driving thin film transistor DT is a shortest dimension (or shortestdistance) of the overlapping region OR in a direction from the sourceelectrode Sd to the drain electrode Dd of the driving thin filmtransistor DT (shown in FIG. 1 and FIG. 3), the channel width Wd of thedriving thin film transistor DT is a shortest dimension of theoverlapping region OR in a direction perpendicular to the channel lengthLd (shown in FIG. 3), and the distance D between the first connectingpost CP1 and the second connecting post CP2 is a greatest dimensionbetween the first connecting post CP1 and the second connecting post CP2in top view. For example, the distance D between the first connectingpost CP1 and the second connecting post CP2 shown in FIG. 2A is adistance between a left-up corner of the first connecting post CP1 and aright down corner of the second connecting post CP2, and the distance Dbetween the first connecting post CP1 and the second connecting post CP2shown in FIG. 2B is a distance between a left-up corner of the leftfirst connecting post CP1 and a right down corner of the right secondconnecting post CP2. The ratio D/Ld being greater than 1 may bring theadvantage of increasing the driving current, and this design may beapplied to other embodiments and their variant embodiments in thehereinafter.

It should be noted that if the channel layer CLd of the driving thinfilm transistor DT is irradiated by the light emitted by the lightemitting layer 174, it may occur an electrical leakage phenomenon. Inaddition, the light emitting area may be reduced if the channel layerCLd overlaps the light emitting layer 174. As a result, the lightemitting layer 174 may not overlap with the channel layer CLd in the topview according to this embodiment. Furthermore, in order to prevent thedriving thin film transistor DT from be damaged during the processes oftransferring the light emitting device LD and mounting the firstconnecting post CP1 and the second connecting post CP2 on the bondingpads BP (for instance, the gate electrode Gd and the channel layer CLdof the driving thin film transistor DT may be in contact with each otherin the transferring or mounting process), the channel layer CLd may notoverlap with the first connecting post CP1, or may not overlap with thefirst connecting post CP1 and the second connecting post CP2 in the topview. In other words, the projection of the channel layer CLd on thesurface of the substrate 110 and the projection of the light emittinglayer 174 on the surface of the substrate 110 are not overlapped. Inanother embodiment, the projections of the channel layer CLd, the lightemitting layer 174, the first connecting post CP1 and the secondconnecting post CP2 on the surface of the substrate 110 are separatefrom each other (as shown in FIG. 1). Therefore, the reliability of thedriving thin film transistor DT may be enhanced.

In the above, the conductive layers may individually include metalmaterial or transparent conductive material (such as indium tin oxide(ITO), indium zinc oxide (IZO)), and each insulating layer mayindividually include silicon oxide, silicon nitride and/or siliconoxynitride, and channel layer CLd may include low temperaturepoly-silicon (LTPS), indium gallium zinc oxide (IGZO) or amorphoussilicon (a-Si), but the present disclosure is not limited thereto.

Referring to FIG. 4 and FIG. 5, FIG. 4 is schematic diagram showing across-sectional view of the substrate structure and a backplanestructure of the electronic device before assembling according to anembodiment of the present disclosure, and FIG. 5 is schematic diagramshowing a cross-sectional view of the electronic device according to anembodiment of the present disclosure, wherein the driving thin filmtransistor DT and the light emitting device LD shown in FIG. 4 and FIG.5 may be the same as the first embodiment or other suitable embodimentsdisclosed in the present disclosure. As shown in FIG. 4, the electronicdevice ED of this embodiment may include at least one substratestructure 100 and a backplane structure BS, wherein FIG. 4 shows twosubstrate structures 100 and one backplane structure BS beforeassembling. Regarding to the backplane structure BS, the backplanestructure BS includes a backplane BKP, at least one integrated circuitIC and a backplane adhesive layer BAL, and the integrated circuit IC andthe backplane adhesive layer BAL is disposed on a surface of thebackplane BKP, wherein the integrated circuit IC is configured tocontrol the gray level signal providing to the light emitting device LD,and the backplane adhesive layer BAL may be disposed overall. In thisembodiment, the backplane adhesive layer BAL may be an anisotropicconductive film (ACF) including conductive particles PTC, and theintegrated circuit IC may be electrically connected to other componentson the backplane BKP through conductive particles PTC of the backplaneadhesive layer BAL, but the present disclosure is not limited thereto.As shown in FIG. 5, the substrate structure 100 and the backplanestructure BS are assembled by disposing solders SO between connectingpads PD on the substrate structure 100 and connecting pads PD on thebackplane structure BS. Thus, after assembling, the integrated circuitIC and the light emitting device LD are situated between the backplaneBKP and the substrate 110, and the integrated circuit IC is electricallyconnected to the driving thin film transistor DT through the connectingpads PD on the substrate structure 100, the connecting pads PD on thebackplane structure BS and the solders SO, but not limited thereto. Inthis embodiment, the backplane adhesive layer BAL may not be in contactwith the substrate structure 100, but not limited thereto. In anotherembodiment, the backplane adhesive layer BAL may be directly in contactwith the substrate structure 100 for enhancing adhesion between thesubstrate structure 100 and the backplane structure BS. In addition, theelectronic device ED may further include an assisting thin filmtransistor AT electrically connected between the integrated circuit ICand the driving thin film transistor DT. The assisting thin filmtransistor AT is configured to provide some functions to reduce thenumber of the integrated circuit IC. For instance, the assisting thinfilm transistor AT of this embodiment may be disposed on the backplaneBKP (in the backplane structure BS) and serve as a component of a gatedriver on panel (GOP), but not limited thereto.

In this embodiment, because the light emitting device LD emits the lightdownward in FIG. 1, FIG. 4 and FIG. 5, an issue which the assisting thinfilm transistor AT and the integrated circuit IC shield the lightemitting device LD needs not to be considered, and the backplane BKP andthe backplane adhesive layer BAL may be transparent, opaque ortranslucent. In other words, the selection of the material and types ofthe backplane BKP and the backplane adhesive layer BAL may be forflexible. Furthermore, the electronic device ED of this embodiment mayinclude a plurality of substrate structures 100 connected to each other,but not limited thereto. In another embodiment, the electronic device EDincludes one substrate structure 100 connected to one backplanestructure BS.

According to some embodiments, the electronic device ED may be a displaydevice, such as a LED display, a micro LED display, a mini LED display,an OLED display, a QLED display, a flexible display and other suitabledisplay devices, wherein the light emitting devices LD and the drivingthin film transistors DT may be arranged as an array or other suitabletype. Furthermore, the substrate structure 100 in the display device maybe configured to display images directly (i.e., the light emittingdevices LD of the substrate structure 100 emits the light based on graylevel signals) or be configured to be a component of a backlight module(i.e., the light emitting devices LD of the substrate structure 100emits light for providing backlight) for example. Also, the displaydevice may further include a related portion of other elements orlayers, such as a related portion of substrate 110, a related portion ofpolarizer, a related portion of insulating layer, or a related portionof encapsulation layer. According to some embodiments, the electronicdevice ED may be an electronic device that has no display function ormay be other suitable electronic device, for example, an antenna.

The electronic device of the present disclosure is not limited to theabove embodiments. Further embodiments of the present disclosure aredescribed below. For ease of comparison, same components will be labeledwith the same symbol in the following. The following descriptions relatethe differences between each of the embodiments, and repeated parts willnot be redundantly described.

Referring to FIG. 6, FIG. 6 is a schematic diagram showing across-sectional view of a substrate structure of an electronic deviceaccording to a second embodiment of the present disclosure. As shown inFIG. 6, a difference between this embodiment and the first embodiment isthat the driving thin film transistor DT of the substrate structure 200of this embodiment is a bottom gate transistor. That is to say, the gateelectrode Gd, the gate insulator GId, the channel layer CLd, the sourceelectrode Sd and the drain electrode Dd are formed as a bottom gatetransistor.

Referring to FIG. 7 and FIG. 8, FIG. 7 is a schematic diagram showing across-sectional view of a substrate structure of an electronic deviceaccording to a third embodiment of the present disclosure, and FIG. 8 isa schematic diagram showing an equivalent circuit of the substratestructure of the electronic device according to the third embodiment ofthe present disclosure, wherein dash-lines in FIG. 7 representelectrical connection paths. As shown in FIG. 7 and FIG. 8, a differencebetween this embodiment and the first embodiment is that the drivingcircuit structure DCS of the substrate structure 300 further includes atleast one switching thin film transistor ST and a capacitor Cpc, and theswitching thin film transistor ST and the capacitor Cpc are electricallyconnected to the driving thin film transistor DT. In this embodiment,for example, the structure of the switching thin film transistor ST maybe similar to the driving thin film transistor DT; that is, a channellayer CLs of the switching thin film transistor ST is formed of thesemiconductor layer 120, a gate electrode Gs of the switching thin filmtransistor ST is formed of the first conductive layer 132, a gateinsulator GIs of the switching thin film transistor ST is formed of thefirst insulating layer 130, and a source electrode Ss and a drainelectrode Ds of the switching thin film transistor ST is formed of thesecond conductive layer 142, but not limited thereto. The capacitor Cpcof this embodiment is formed by the semiconductor layer 120 and thesecond conductive layer 142, but not limited thereto. Moreover, thedriving circuit structure DCS may optionally include a fourth conductivelayer 310 and a buffer 320, wherein the fourth conductive layer 310 isdisposed between the buffer 320 and the substrate 110, and the buffer320 is disposed between the fourth conductive layer 310 and the firstconductive layer 132. Regarding to the circuit of this embodiment, thegate electrode Gs of the switching thin film transistor ST iselectrically connected to a controlling input providing a switchingsignal, one of the source electrode Ss and the drain electrode Ds of theswitching thin film transistor ST is electrically connected to a datainput, the other one of the source electrode Ss and the drain electrodeDs of the switching thin film transistor ST is electrically connected tothe gate electrode Gd of the driving thin film transistor DT and thecapacitor Cpc, one of the source electrode Sd and the drain electrode Ddof the driving thin film transistor DT is electrically connected to onevoltage source (ELVDD shown in FIG. 8), the other one of the sourceelectrode Sd and the drain electrode Dd of the driving thin filmtransistor DT is electrically connected to the capacitor Cpc and thefirst connecting post CP1 of the light emitting device LD, and thesecond connecting post CP2 of the light emitting device LD iselectrically connected to another voltage source (ELVSS shown in FIG.8), such that the switching thin film transistor ST may control thelight emitting device LD to change intensity of the light, and thecapacitor Cpc may maintain the intensity of the light emitted by thelight emitting device LD in a while, but not limited thereto. Anysuitable component may be added in this circuit. Also, any suitablecircuit having the similar function may be used in the presentdisclosure.

Referring to FIG. 9 and FIG. 10, FIG. 9 is a schematic diagram showing across-sectional view of a substrate structure of an electronic deviceaccording to a fourth embodiment of the present disclosure, and FIG. 10is a schematic diagram showing an equivalent circuit of the substratestructure of the electronic device according to the fourth embodiment ofthe present disclosure, wherein dash-lines in FIG. 9 representelectrical connection paths. As shown in FIG. 9 and FIG. 10, adifference between this embodiment and the third embodiment is that thesubstrate structure 400 further includes an electrostatic dischargeprotection device ESD electrically connected to at least one of thefirst connecting post CP1 or the second connecting post CP2 of the lightemitting device LD. The electrostatic discharge protection device ESDand the driving thin film transistor DT may be manufacturedsimultaneously, but not limited thereto. In this embodiment, forinstance, the electrostatic discharge protection device ESD may includea thin film transistor of which gate is electrically connected to itsdrain, so as to serve as a diode, but not limited thereto. In anotherembodiment, the electrostatic discharge protection device ESD mayinclude any suitable components. Furthermore, in this embodiment, oneend of the electrostatic discharge protection device ESD (the gate orthe drain) is electrically connected to the first connecting post CP1 ofthe light emitting device LD, and the other end of the electrostaticdischarge protection device ESD (the source) and the second connectingpost CP2 of the light emitting device LD are electrically connected toeach other and electrically connected to the common electrode, but notlimited thereto. In another embodiment, one end of the electrostaticdischarge protection device ESD (the gate or the drain) is electricallyconnected to the first connecting post CP1 of the light emitting deviceLD, and the other end of the electrostatic discharge protection deviceESD (the source) is not electrically connected to the second connectingpost CP2 of the light emitting device LD directly. Thus, theelectrostatic discharge protection device ESD can release statics in thelight emitting device LD.

Referring to FIG. 11 and FIG. 12, FIG. 11 is a schematic diagram showinga cross-sectional view of a substrate structure of an electronic deviceaccording to a variant embodiment of the fourth embodiment of thepresent disclosure, and FIG. 12 is a schematic diagram showing atop-view of a light emitting device and bonding pads of the substratestructure and an electrostatic discharge protection device of theelectronic device according to the variant embodiment of the fourthembodiment of the present disclosure, wherein dash-lines in FIG. 11represent electrical connection paths, and FIG. 12 only shows the lightemitting layer 174, the connecting posts, the bonding pads BP, theelectrostatic discharge protection device ESD and conductive lines (aportion of the device conductive layer 190) to make the figures clear.As shown in FIG. 11 and FIG. 12, a difference between this embodimentand the fourth embodiment is that the electrostatic discharge protectiondevice ESD of the substrate structure 400′ is disposed on the drivingcircuit structure DCS. In this embodiment, the electrostatic dischargeprotection device ESD and light emitting device LD may be transferred onthe driving circuit structure DCS at the same time, and theelectrostatic discharge protection device ESD may be electricallyconnected between the first connecting post CP1 and the secondconnecting post CP2 of the light emitting device LD through conductivelines 492 of the device conductive layer 190, but the present disclosureis not limited thereto.

Referring to FIG. 13, FIG. 13 is a schematic diagram showing across-sectional view of a substrate structure of an electronic deviceaccording to a fifth embodiment of the present disclosure. As shown inFIG. 13, a difference between this embodiment and the first embodimentis that the driving circuit structure DCS of the substrate structure 500further includes a transparent conductive layer 510 disposed between thethird insulating layer 150 and the third conductive layer 152, and thethird conductive layer 152 may be electrically connected to the secondconductive layer 142 through the transparent conductive layer 510. Forexample, one of the bonding pads BP is electrically connected to one ofthe drain electrode Dd and the source electrode Sd of the driving thinfilm transistor DT through the transparent conductive layer 510.

Referring to FIG. 14, FIG. 14 is a schematic diagram showing across-sectional view of a substrate structure of an electronic deviceaccording to a sixth embodiment of the present disclosure. As shown inFIG. 14, a difference between this embodiment and the first embodimentis that the adhesive layer 160 is disposed between the driving circuitstructure DCS and the light emitting device LD, the adhesive layer 160is an anisotropic conductive film (ACF), and the first connecting postCP1 and the second connecting post CP2 of the light emitting device LDmay be respectively electrically connected to the bonding pads BPthrough conductive particles PTC. In this embodiment, the conductiveparticles PTC are squeezed between the connecting posts (the firstconnecting post CP1 and the second connecting post CP2) and the bondingpads BP for forming conductive paths, but not limited thereto.

Referring to FIG. 15A and FIG. 15B, FIG. 15A and FIG. 15B are schematicdiagrams showing a cross-sectional view of a substrate structure of anelectronic device according to a seventh embodiment of the presentdisclosure. As shown in FIG. 15A and FIG. 15B, a difference between thisembodiment and the first embodiment is that the electronic device EDfurther includes a buffer layer 710 disposed on the light emittingdevice LD. In this embodiment, the buffer layer 710 is disposed on thepassivation layer PS and covered by the over coating layer OC. Forexample, the buffer layer 710 shown in FIG. 15A covers the top of thelight emitting device LD, and the buffer layer 710 shown in FIG. 15Bcovers both the top and sidewalls of the light emitting device LD, butnot limited thereto. In this embodiment, the buffer layer 710 may beconfigured to decrease the height difference between the light emittingdevices LD to enhance adhesion between the over coating layer OC and thelight emitting devices LD. Also, the buffer layer 710 may decrease themechanical stress applying on the light emitting device LD whentransferring the light emitting device LD, so as to protect the lightemitting device LD. The material of the buffer layer 710 may be resin,epoxy resin, silicone, polydimethylsiloxane (PDMS), polyvinyl acetate,polyvinyl ester or polychloroprene or a combination thereof, but notlimited thereto.

Referring to FIG. 16 to FIG. 17B, FIG. 16 is a schematic diagram showinga cross-sectional view of a substrate structure of an electronic deviceaccording to an eighth embodiment of the present disclosure, and FIG.17A and FIG. 17B are schematic diagrams showing a cross-sectional viewof the electronic device according to the eighth embodiment of thepresent disclosure, wherein the driving thin film transistor DT and thelight emitting device LD shown in FIG. 17A and FIG. 17B may be the sameas the eighth embodiment. As shown in FIG. 16, a difference between thisembodiment and the first embodiment is that the light emitting device LDdisposed on the driving circuit structure DCS emits light upward (fromdown to up) in FIG. 16. In this embodiment, the light emitting device LDis transferred reversely; that is to say, a device substrate 802 isdisposed on the second carrier transmitting layer 176, wherein thedevice substrate 802 is a base configured to transfer light. Moreover,because the light is emitted upward, the light may not irradiate thechannel layer CLd of the driving thin film transistor DT, such that thelight emitting layer 174 of the light emitting device LD may overlap thechannel layer CLd of the driving thin film transistor DT in someembodiments. As shown in FIG. 16 to FIG. 17B, because the light isemitted upward, the backplane BKP and the backplane adhesive layer BALshould not influence the light emitted from the light emitting device LDsignificantly. For example, in FIG. 17A, the backplane BKP may betransparent (i.e. the backplane BKP may include glass, polyimide orother transparent material), the overall backplane adhesive layer BALmay include an anisotropic conductive film (ACF) 810 and a transparentadhesive 820, and the transparent adhesive 820 may include acrylic,polyvinyl alcohol (PVA) or other transparent adhesive. For anotherexample, in FIG. 17B, the backplane BKP may be transparent, thebackplane adhesive layer BAL (anisotropic conductive film 810) isblanket formed, the electronic device ED further includes a frameadhesive 830 disposed on a peripheral area of the electronic device ED,and the frame adhesive 830 may include epoxy resin or other suitableadhesive. The projections of the integrated circuit IC and the assistingthin film transistor AT on the surface of the backplane BKP are separatefrom the projections of the light emitting devices LD on the surface ofthe backplane, and the light emitting devices LD are not overlapped withthese components if they are made of non-transparent or opaquematerials. In addition, the frame adhesive 830 shown in FIG. 17B may betransparent, opaque or translucent. Furthermore, the transparentadhesive 820 and the frame adhesive 830 respectively shown in FIG. 17Aand FIG. 17B are in contact with the substrate structure 800, but notlimited thereto. In another embodiment, the light emitting device LDshown in FIG. 17A and FIG. 17B may be configured to be a component of abacklight module to provide backlight, and the light emitting device LDcould emit the light downward or upward. Therefore, if the lightemitting device LD emits the light downward, a panel (not shown) couldbe disposed at a side of the substrate 110 opposite to the lightemitting device LD, and the backplane BKP could be made ofnon-transparent or reflective material; if the light emitting device LDemits the light upward, a panel could be disposed on the backplane BKP,and the backplane BKP could be made of transparent material, but notlimited thereto.

Referring to FIG. 18, FIG. 18 is a schematic diagram showing across-sectional view of an electronic device according to a ninthembodiment of the present disclosure, wherein the driving thin filmtransistor DT and the light emitting device LD shown in FIG. 18 may bethe same as one of the above embodiments disclosed in the presentdisclosure or suitable variant embodiments. As shown in FIG. 18, adifference between this embodiment and the first embodiment is that thesubstrate structure 900 may further include one or more assisting thinfilm transistor(s) AT, and the assisting thin film transistor(s) AT ofthe substrate structure 900 may be disposed on the peripheral area ofthe electronic device ED.

Referring to FIG. 19, FIG. 19 is a schematic diagram showing across-sectional view of an electronic device according to a tenthembodiment of the present disclosure, wherein the driving thin filmtransistor DT and the light emitting device LD shown in FIG. 19 may bethe same as one of the above embodiments disclosed in the presentdisclosure or other suitable embodiments. As shown in FIG. 19, adifference between this embodiment and the first embodiment is that theelectronic device ED may not have the backplane structure BS. Therefore,the integrated circuit IC (not shown in FIG. 19) and the assisting thinfilm transistor AT may be disposed inside the substrate structure 1000or disposed at other suitable position. In an embodiment, after formingthe substrate structure 1000 and the over coating layer OC, anencapsulating process may be performed on the substrate structure 1000directly, but not limited thereto. In another embodiment, after formingthe substrate structure 1000 and the over coating layer OC and beforeperforming the encapsulating process, a covering plate may be disposedon the over coating layer OC.

Referring to FIG. 20, FIG. 20 is a schematic diagram showing across-sectional view of an electronic device according to an eleventhembodiment of the present disclosure, wherein the driving thin filmtransistor DT and the light emitting device LD shown in FIG. 20 may bethe same as one of the above embodiments disclosed in the presentdisclosure or other suitable embodiments. For example, the substratestructure 100 shown in FIG. 20 is the same as the first embodiment. Asshown in FIG. 20, a difference between this embodiment and the firstembodiment is that the electronic device ED further includes a panel1100. For example, if the electronic device ED is a display device, thepanel 1100 is a display panel 1100, but not limited thereto. The panel1100 may be disposed at a side of the substrate structure 100 or on thebackplane BKP. For instance, in FIG. 20, because the light emittingdevice LD emits the light downward, the panel 1100 is disposed at a sideof the substrate 110 opposite to the light emitting device LD, but notlimited thereto. In this embodiment, the substrate structure 100including the driving circuit structure DCS and the light emittingdevice LD is configured to be a component of a backlight module toprovide backlight for the panel 1100. In another instance, the lightemitting device LD may emit the light upward (e.g. the embodiment shownin FIG. 16, FIG. 17A or FIG. 17B), the panel 1100 is disposed on thebackplane BKP or on the over coating layer OC, but not limited thereto.

In the substrate structure 100 configured to be the backlight module,the following features may be optionally included. With reference toFIG. 1 and other figures related to the previous embodiments, thechannel layer CLd of the driving thin film transistor DT may not overlapwith the light emitting layer 174 and/or the first connecting post CP1of the light emitting device LD. The driving circuit structure DCS mayfurther include the switching thin film transistor ST electricallyconnected to the driving thin film transistor DT. The driving circuitstructure DCS may further include the capacitor Cpc electricallyconnected to the driving thin film transistor DT. The electronic deviceED may further include the buffer layer 710 disposed on the lightemitting device LD. The substrate structure 100 may further include theelectrostatic discharge protection device ESD electrically connected toat least one of the first connecting post CP1 and the second connectingpost CP2. The electronic device ED may further include the adhesivelayer 160 disposed between the driving circuit structure DCS and theemitting device LD. The backplane structure BS including the backplaneBKP and the integrated circuit IC is disposed on the substrate structure100, wherein the integrated circuit IC and the at least one lightemitting device LD are situated between the backplane BKP and thesubstrate 110, and the integrated circuit IC is electrically connectedto the at least one driving thin film transistor DT. Moreover, theelectronic device ED may further include other suitable components, forexample, the electronic device ED may further include a light diffusionfilm for diffusing the backlight, or other optical films such as BEF,DBEF, lens, microlens, prism films, but not limited thereto. In otherembodiments, the electronic device ED may further include wavelengthconversion layer (not shown) disposed on the emitting device LD, such asphosphor, quantum dots, color filter, but not limited to.

To summarize, because the channel layer of the driving thin filmtransistor of the present disclosure has the channel length less thanthe distance between the first connecting post and the second connectingpost, the driving current passing through the driving thin filmtransistor and configured to drive the light emitting device isincreased even though the light emitting area is larger. Accordingly,the performance of the electronic device may be improved and/or the costof the electronic device may be reduced.

Those skilled in the art will readily observe that numerousmodifications and alterations of the device and method may be made whileretaining the teachings of the disclosure. Accordingly, the abovedisclosure should be construed as limited only by the metes and boundsof the appended claims.

What is claimed is:
 1. A display device, comprising: a substrate; adriving circuit structure disposed on the substrate and having at leastone driving thin film transistor; and at least one light emitting devicedisposed on the driving circuit structure, and comprising a deviceconductive layer, a first conductive connecting structure, a secondconductive connecting structure, a first carrier transmitting layer anda second carrier transmitting layer, wherein the device conductive layercomprises a first section and a second section, the first section iselectrically connected to the first carrier transmitting layer throughthe first conductive connecting structure, and the second section iselectrically connected to the second carrier transmitting layer throughthe second conductive connecting structure, wherein the at least onelight emitting device is electrically connected to the at least onedriving thin film transistor, and wherein a minimum distance between atleast a part of a topmost surface of the first section and the substrateis greater than a minimum distance between a topmost surface of thesecond conductive connecting structure and the substrate, and a minimumdistance between at least a part of a topmost surface of the secondsection and the substrate is greater than a minimum distance between atopmost surface of the first conductive connecting structure and thesubstrate.
 2. The display device of claim 1, wherein the topmost surfaceof the first conductive connecting structure and the topmost surface ofthe second conductive connecting structure are coplanar.
 3. The displaydevice of claim 1, wherein the at least one light emitting device has ataper profile.
 4. The display device of claim 1, wherein the at leastone light emitting device further comprises a light emitting layerdisposed between the first carrier transmitting layer and the secondcarrier transmitting layer.
 5. The display device of claim 4, whereinthe at least one driving thin film transistor comprises a channel layer,and the light emitting layer and the channel layer are not overlapped.6. The display device of claim 1, wherein the at least one driving thinfilm transistor comprises a channel layer, and the channel layer doesnot overlap with the first section of the device conductive layer. 7.The display device of claim 1, wherein the at least a part of thetopmost surface of the first section and the at least a part of thetopmost surface of the second section are coplanar.
 8. The displaydevice of claim 1, wherein the at least one light emitting device iselectrically connected to the at least one driving thin film transistorthrough the first section and the first conductive connecting structure.9. The display device of claim 1, wherein the driving circuit structurefurther comprises at least one switching thin film transistorelectrically connected to the at least one driving thin film transistor.10. The display device of claim 1, wherein the driving circuit structurefurther comprises a capacitor electrically connected to the at least onedriving thin film transistor.
 11. The display device of claim 1, furthercomprising an electrostatic discharge protection device electricallyconnected to one of the first section and the second section of thedevice conductive layer.
 12. The display device of claim 1, furthercomprising an adhesive layer disposed on the driving circuit structure,wherein the adhesive layer is in contact with the at least one lightemitting device.
 13. The display device of claim 12, wherein theadhesive layer has a plurality of conductive particles electricallyconnected to the at least one light emitting device.
 14. The displaydevice of claim 1, further comprises a buffer layer disposed on the atleast one light emitting device.
 15. The display device of claim 1,further comprising a backplane and an integrated circuit, wherein theintegrated circuit and the at least one light emitting device aresituated between the backplane and the substrate, and the integratedcircuit is electrically connected to the at least one driving thin filmtransistor.
 16. The display device of claim 15, further comprising anassisting thin film transistor disposed on the backplane, wherein theassisting thin film transistor is electrically connected between theintegrated circuit and the at least one driving thin film transistor.17. The display device of claim 1, wherein the at least one lightemitting device is disposed on the driving circuit structure by atransferring process.
 18. The display device of claim 1, wherein the atleast one light emitting device emits light for providing a backlight.